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IDT7MMV4101 Datasheet 128K x 24 Three Megabit 3.3V CMOS Static RAM

Manufacturer: Integrated Device

Datasheet Details

Part number IDT7MMV4101
Manufacturer Integrated Device
File Size 86.90 KB
Description 128K x 24 Three Megabit 3.3V CMOS Static RAM
Download IDT7MMV4101 Download (PDF)

General Description

The IDT7MMV4101 is a three megabit static RAM constructed on an multilayer laminate substrate using three 3.3V, 128K x 8 (IDT71V124) static RAMS encapsulated in a Ball Grid Array (BGA).

The IDT7MMV4101 is packaged in a plastic BGA.

The BGA configuration allows 119 leads to be placed on a package 14mm by 22mm.

Overview

128K x 24 Three Megabit 3.3V CMOS Static RAM IDT7MMV4101 x x.

Key Features

  • High density 3 megabit 3.3V static RAM Low profile 119 lead, 14mm x 22mm BGA (Ball Grid Array) Fast RAM access times: 10,12,15ns Single 3.3V power supply Multiple Vcc & GND pins for maximum noise immunity Inputs/outputs directly LVTTL compatible Commercial (0O C to +70O C) Industrial (-40O C to +85O C) temperature options.
  • Commercial: 10 / 12 / 15 ns.
  • Industrial: 12 / 15 ns.