61LV25616AL - 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

Datasheet Summary

Description

static RAM organized as 262,144 words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Features

High-speed access time:.
10, 12 ns.
CMOS low power operation.
Low stand-by power:.
Less than 5 mA (typ. ) CMOS stand-by.
TTL compatible interface levels.
Single 3.3V power supply.
Fully static operation: no clock or refresh required.
Three state outputs.
Data control for upper and lower bytes.
Industrial temperature available ISSI.

Integrated Silicon Solution Inc

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Datasheet Details

Part number	61LV25616AL
Manufacturer	Integrated Silicon Solution Inc
File Size	67.45 KB
Description	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
Datasheet	61LV25616AL Datasheet
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IS61LV25616AL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: — 10, 12 ns • CMOS low power operation • Low stand-by power: — Less than 5 mA (typ.) CMOS stand-by • TTL compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available ISSI FEBRUARY 2003 ® DESCRIPTION The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

Published: Apr 3, 2005 |