61LV51216 - IS61LV51216

Datasheet Summary

Description

organized as 525,288 words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

Features

High-speed access time:.
8, 10, and 12 ns.
CMOS low power operation.
Low stand-by power:.
Less than 5 mA (typ. ) CMOS stand-by.
TTL compatible interface levels.
Single 3.3V power supply.
Fully static operation: no clock or refresh required.
Three state outputs.
Data control for upper and lower bytes.
Industrial temperature available.
Lead-free available.

Integrated Silicon Solution

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Datasheet Details

Part number	61LV51216
Manufacturer	Integrated Silicon Solution
File Size	141.95 KB
Description	IS61LV51216
Datasheet	61LV51216 Datasheet
Additional preview pages of the 61LV51216 datasheet.

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Full PDF Text Transcription

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IS61LV51216 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY www.datasheet4u.com ISSI MARCH 2005 ® FEATURES • High-speed access time: — 8, 10, and 12 ns • CMOS low power operation • Low stand-by power: — Less than 5 mA (typ.) CMOS stand-by • TTL compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Lead-free available DESCRIPTION The ISSI IS61LV51216 is a high-speed, 8M-bit static RAM organized as 525,288 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.

Published: Apr 27, 2009 |