IS41C4100 Description
The ISSI IS41C4100 and IS41LV4100 are 1,048,576 x 4-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 4-bit word.
IS41C4100 Key Features
- TTL patible inputs and outputs
- Refresh Interval: 1024 cycles/16 ms
- Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden
- JEDEC standard pinout
- Single power supply 5V ± 10% (IS41C4100) 3.3V ± 10% (IS41LV4100)
- Industrail Temperature Range -40oC to 85oC