IS41LV16256B Datasheet | ISSI

FEATURES - TTL patible inputs and outputs - Refresh Interval: 512 cycles/8 ms - Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden - JEDEC standard pinout - Single power supply: 3.3V ± 10% - Byte Write and Byte Read operation via two CAS - Lead-free available .. ISSI APRIL 2005 ® DESCRIPTION The ISSI IS41LV16256B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV16256B ideal for use in 16 and 32-bit wide data bus systems. These features make the IS41LV16256B ideally suited for high band-width graphics, digital signal processing, highperformance puting systems, and peripheral applications. The IS41LV16256B is packaged in 40-pin 400-mil SOJ and TSOP (Type II). -35 35 11 18 14 60 -60 60 15 30 25 110 Unit ns ns ns ns ns KEY TIMING PARAMETERS Parameter Max. RAS Access Time (t RAC) Max. CAS Access Time (t CAC) Max. Column Address Access Time (t AA) Min. EDO Page Mode Cycle Time (t PC) Min. Read/Write Cycle Time (t RC) PIN CONFIGURATIONS 40-Pin TSOP (Type II) VDD I/O0 I/O1 I/O2 I/O3 VDD I/O4 I/O5 I/O6 I/O7 1 2 3 4 5 6 7 8 9 10 40 39 38 37 36 35 34 33 32 31 GND I/O15 I/O14 I/O13 I/O12 GND I/O11 I/O10 I/O9 I/O8 40-Pin SOJ VDD I/O0 I/O1 I/O2 I/O3 VDD I/O4 I/O5 I/O6 I/O7 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 GND I/O15 I/O14 I/O13 I/O12 GND I/O11 I/O10 I/O9 I/O8 NC LCAS UCAS OE A8 A7 A6 A5 A4 GND PIN DESCRIPTIONS A0-A8 I/O0-15 WE OE RAS UCAS LCAS VDD GND NC Address Inputs Data Inputs/Outputs Write Enable Output Enable Row Address Strobe Upper Column Address Strobe Lower Column Address Strobe Power Ground No Connection NC NC WE RAS NC A0 A1 A2 A3 VDD 11 12 13 14 15 16 17 18 19 20 30 29 28 27 26 25 24 23 22 21 NC LCAS UCAS OE A8...