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IS41LV16257B - 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

General Description

www.DataSheet4U.com ISSI APRIL 2005 ®

Key Features

  • Fast access and cycle time TTL compatible inputs and outputs Refresh Interval: 512 cycles/8 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden JEDEC standard pinout Single power supply: 3.3V ± 10% Byte Write and Byte Read operation via two CAS Lead-free available The ISSI IS41LV16257B is 262,144 x 16-bit highperformance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS41LV16257A 256K x 16 (4-MBIT) DYNAMIC RAM
IS41LV16256A 256K x 16 (4-MBIT) DYNAMIC RAM
IS41LV16256B 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100A 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS41LV16257B 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION www.DataSheet4U.com ISSI APRIL 2005 ® FEATURES • • • • • • • • Fast access and cycle time TTL compatible inputs and outputs Refresh Interval: 512 cycles/8 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden JEDEC standard pinout Single power supply: 3.3V ± 10% Byte Write and Byte Read operation via two CAS Lead-free available The ISSI IS41LV16257B is 262,144 x 16-bit highperformance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes these devices ideal for use in 16- and 32-bit wide data bus systems.