Download the IS42VS16160D datasheet PDF.
This datasheet also covers the IS42VS83200D variant, as both devices belong to the same 256-mbit synchronous dram family and are provided as variant models within a single manufacturer datasheet.
General Description
A0-A12
Row Address Input
A0-A9
Column Address Input
BA0, BA1
Bank Select Address
DQ0 to DQ7 Data I/O
CLK
System Clock Input
CKE
Clock Enable
CS
Chip Select
RAS
Row Address Strobe Command
CAS
Column Address Strobe Command
WE DQM Vdd Vss Vddq Vssq NC
Writ
Key Features
Clock frequency: 133, 125 MHz.
Fully synchronous; all signals referenced to a positive clock edge.
Note: The manufacturer provides a single datasheet file (IS42VS83200D-IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IS42VS16160D (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IS42VS16160D. For precise diagrams, and layout, please refer to the original PDF.
IS42VS83200D, IS42VS16160D IS45VS83200D, IS45VS16160D 32Meg x 8, 16Meg x16 PRELIMINARY INFORMATION 256-MBIT SYNCHRONOUS DRAM MAY 2009 FEATURES • Clock frequency: 133, 125...
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56-MBIT SYNCHRONOUS DRAM MAY 2009 FEATURES • Clock frequency: 133, 125 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 1.8V + 0.
IS42VS16160D Datasheet
