IS42VS83200D - 256-MBIT SYNCHRONOUS DRAM

Product Overview

Integrated Silicon Solution

Datasheet Details

Part number	IS42VS83200D
Manufacturer	Integrated Silicon Solution
File Size	860.56 KB
Description	256-MBIT SYNCHRONOUS DRAM
Datasheet	IS42VS83200D Datasheet
Additional preview pages of the IS42VS83200D datasheet.

Product details

Description

A0-A12 Row Address Input A0-A9 Column Address Input BA0, BA1 Bank Select Address DQ0 to DQ7 Data I/O CLK System Clock Input CKE Clock Enable CS Chip Select RAS Row Address Strobe Command CAS Column Address Strobe Command WE DQM Vdd Vss Vddq Vssq NC Write Enable Data Input/Output Mask Power Ground Power Supply for I/O Pin Ground for I/O Pin No Connection Integrated Silicon Solution, Inc. www.issi.com Rev. 00A 04/21/09 3 IS42VS83200D, I

Features

Clock frequency: 133, 125 MHz.
Fully synchronous; all signals referenced to a positive clock edge.
Internal bank for hiding row access/precharge.
Single Power supply: 1.8V + 0.1V.
LVCMOS interface.
Programmable burst length.
(1, 2, 4, 8, full page).
Programmable burst sequence: Sequential/Interleave.
Auto Refresh (CBR).
Self Refresh.
8K refresh cycles every 16 ms (A2 grade) or 8K refres.

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Published: Jul 25, 2016 |