IS43R86400E - 512Mb DDR SDRAM

Product Overview

Integrated Silicon Solution

Datasheet Details

Part number	IS43R86400E
Manufacturer	Integrated Silicon Solution
File Size	699.72 KB
Description	512Mb DDR SDRAM
Datasheet	IS43R86400E Datasheet
Additional preview pages of the IS43R86400E datasheet.

Product details

Description

x8 A0-A12 Row Address Input A0-A9, A11 Column Address Input BA0, BA1 Bank Select Address DQ0 DQ7 Data I/O CK, CK System Clock Input CKE Clock Enable CS Chip Select CAS Column Address Strobe Command RAS Row Address Strobe Command WE Write Enable 4 66 VSS 65 DQ7 64 VSSQ

Features

VDD and VDDQ: 2.5V ± 0.2V (-5, -6).
VDD and VDDQ: 2.5V ± 0.1V (-4).
SSTL_2 compatible I/O.
Double-data rate architecture; two data transfers per clock cycle.
Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver.
DQS is edge-aligned with data for READs and centre-aligned with data for WRITEs.
Differential clock inputs (CK and CK).
DLL aligns DQ and DQS tran.

📁 Similar Datasheet

IS43R86400F - 512Mb DDR SDRAM (ISSI)
IS43R83200B - 256Mb DDR Synchronous DRAM (ISSI)
IS43R83200D - DDR SDRAM (ISSI)
IS43R16160B - 256Mb DDR Synchronous DRAM (ISSI)
IS43R16160D - DDR SDRAM (ISSI)
IS43R16320F - 512Mb DDR SDRAM (ISSI)
IS43R16400B - Four internal banks for concurrent operation (ISSI)
IS43R32800D - DDR SDRAM (ISSI)

Other Datasheets by Integrated Silicon Solution

IS43R86400D - 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM
IS43R83200F - 256Mb DDR SDRAM
IS43R16160 - 256Mb Synchronous DRAM
IS43R16160A - 16Meg x 16 256-MBIT DDR SDRAM
IS43R16160F - 256Mb DDR SDRAM
IS43R16320A - 32Meg x 16 512-MBIT DDR SDRAM

Published: Jul 25, 2016 |