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IS45S16160C - 256 Mb Single Data Rate Synchronous DRAM

General Description

- Single 3.3V ±0.3V power supply - Max.

Key Features

  • Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the.

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📁 Similar Datasheet

Part Number Description Manufacturer
IS45S16160G 256Mb SYNCHRONOUS DRAM ISSI
IS45S16160J 256Mb SYNCHRONOUS DRAM ISSI
IS45S16160L 256Mb SYNCHRONOUS DRAM ISSI
IS45S16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM ISSI
IS45S16100H 16Mb SYNCHRONOUS DYNAMIC RAM ISSI

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS45S16160D 256-MBIT SYNCHRONOUS DRAM
IS45S16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
IS45S16320B 32M x 16 512Mb SYNCHRONOUS DRAM
IS45S16400C1 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS45S83200C IS45S16160C 256 Mb Single Data Rate Synchronous DRAM www.DataSheet4U.com APRIL 2009 IS45S83200C is organized as 4-bank x 8,388,608-word x 8-bit Synchronous DRAM with LVTTL interface and IS45S16160C is organized as 4-bank x 4,194,304-word x 16-bit. All inputs and outputs are referenced to the rising edge of CLK. IS45S83200C and IS45S16160C achieve very high speed data rates up to 166MHz, and are suitable for main memories or graphic memories in computer systems. General Description - Single 3.3V ±0.3V power supply - Max.