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IS45S16320B - 32M x 16 512Mb SYNCHRONOUS DRAM

General Description

A0-A12 A0-A9, A11 BA0, BA1 DQ0 to DQ7 CLK CKE CS RAS CAS Row Address Input Column Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe Command Column Address Strobe Command WE DQM Vdd Vss Vddq Vssq NC Write Enable Data I

Key Features

  • Clock frequency: 166, 143, 133 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Power supply Vdd Vddq IS42/45S16320B 3.3V 3.3V IS42S86400B.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave.
  • Auto Refresh (CBR).
  • Self Refresh.
  • 8K refres.

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📁 Similar Datasheet

Part Number Description Manufacturer
IS45S16320D 512Mb SDRAM ISSI
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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS45S16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
IS45S16160C 256 Mb Single Data Rate Synchronous DRAM
IS45S16160D 256-MBIT SYNCHRONOUS DRAM
IS45S16400C1 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS42S86400B IS42S16320B, IS45S16320B www.DataSheet4U.com 64M x 8, 32M x 16 SEPTEMBER 2009 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply Vdd Vddq IS42/45S16320B 3.3V 3.