Datasheet Details
| Part number | IS45S16800E |
|---|---|
| Manufacturer | ISSI (now Infineon) |
| File Size | 811.29 KB |
| Description | 128Mb SYNCHRONOUS DRAM |
| Datasheet |
 IS45S16800E Datasheet
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General Description
A0-A11 A0-A9 BA0, BA1 DQ0 to DQ7 CLK CKE CS RAS CAS
Row Address Input Column Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe Command Column Address Strobe Command
WE DQM Vdd Vss Vddq Vssq NC
Write Enable Dat
Key Features
- Clock frequency: 166, 143 MHz.
- Fully synchronous; all signals referenced to a positive clock edge.
- Internal bank for hiding row access/precharge.
- Power supply IS45S81600E Vdd Vddq 3.3V 3.3V IS45S16800E 3.3V 3.3V.
- LVTTL interface.
- Programmable burst length.
- (1, 2, 4, 8, full page).
- Programmable burst sequence: Sequential/Interleave.
- Auto Refresh (CBR).
- Self R.
