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IS49NLC36160 Datasheet

Manufacturer: ISSI (now Infineon)
IS49NLC36160 datasheet preview

IS49NLC36160 Details

Part number IS49NLC36160
Datasheet IS49NLC36160 IS49NLC96400 Datasheet (PDF)
File Size 633.13 KB
Manufacturer ISSI (now Infineon)
Description Common I/O RLDRAM 2 Memory
IS49NLC36160 page 2 IS49NLC36160 page 3

IS49NLC36160 Overview

1.1 576Mb (64Mx9) mon I/O BGA Ball‐out (Top View) 1 A VREF B VDD C VTT D A221 E A21 F A5 G A8.

IS49NLC36160 Key Features

  • 533MHz DDR operation (1.067 Gb/s/pin data  rate) 
  • 38.4Gb/s peak bandwidth (x36 at 533 MHz  clock frequency) 
  • Reduced cycle time (15ns at 533MHz) 
  • 32ms refresh (16K refresh for each bank; 128K 
  • 8 internal banks 
  • Non‐multiplexed addresses (address  multiplexing option available) 
  • SRAM‐type interface 
  • Programmable READ latency (RL), row cycle  time, and burst sequence length 
  • Balanced READ and WRITE latencies in order to  optimize data bus utilization 
  • Data mask signals (DM) to mask signal of  WRITE data; DM is sampled on both edges of  DK. 

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