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IS49RL36160 - 1 Meg x 36 x 16 Banks RLDRAM

This page provides the datasheet information for the IS49RL36160, a member of the IS49RL18320 1 Meg x 36 x 16 Banks RLDRAM family.

Datasheet Summary

Description

8 General Notes 8 State Diagram 9 Functional Block Diagrams 10 Ball Assignments and Descriptions 12 Package Dimensions 16 Electrical Characteristics IDD Specifications 17 Electrical Specifications Absolute Ratings and I/O Capacitance

Features

  • 1066 MHz DDR operation (2133 Mb/s/ball data rate).
  • 76.8 Gb/s peak bandwidth (x36 at 1066 MHz clock frequency).
  • Organization.
  • 32 Meg x 18, and 16 Meg x 36 common I/O (CIO).
  • 16 banks.
  • 1.2V center-terminated push/pull I/O.
  • 2.5V V EXT , 1.35V V DD , 1.2V V DDQ I/O.
  • Reduced cycle time (tRC (MIN) = 8 - 12ns).
  • SDR addressing.
  • Programmable READ/WRITE latency (RL/WL) and burst length.
  • Data mas.

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Datasheet preview – IS49RL36160

Datasheet Details

Part number IS49RL36160
Manufacturer Integrated Silicon Solution
File Size 2.89 MB
Description 1 Meg x 36 x 16 Banks RLDRAM
Datasheet download datasheet IS49RL36160 Datasheet
Additional preview pages of the IS49RL36160 datasheet.

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Full PDF Text Transcription

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RLDRAM 3 IS49RL18320– 2 Meg x 18 x 16 Banks IS49RL36160– 1 Meg x 36 x 16 Banks Features • 1066 MHz DDR operation (2133 Mb/s/ball data rate) • 76.8 Gb/s peak bandwidth (x36 at 1066 MHz clock frequency) • Organization – 32 Meg x 18, and 16 Meg x 36 common I/O (CIO) – 16 banks • 1.2V center-terminated push/pull I/O • 2.5V V EXT , 1.35V V DD , 1.
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