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IS61C25616AS - 256K x 16 HIGH-SPEED CMOS STATIC RAM

Download the IS61C25616AS datasheet PDF. This datasheet also covers the IS61C25616AL variant, as both devices belong to the same 256k x 16 high-speed cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

words by 16 bits.

performance CMOS technology.

Key Features

  • HIGH SPEED: (IS61/64C25616AL).
  • High-speed access time: 10ns, 12 ns.
  • Low Active Power: 150 mW (typical).
  • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS).
  • High-speed access time: 25 ns.
  • Low Active Power: 75 mW (typical).
  • Low Standby Power: 1 mW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single 5V ± 10% power supply.
  • Fully static operation: no clock or refresh required.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS61C25616AL-IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS61C1024AL 128K x 8 HIGH-SPEED CMOS STATIC RAM ISSI
IS61C3216 32K x 16 HIGH-SPEED CMOS STATIC RAM ISSI
IS61C5128AL 512K x 8 HIGH-SPEED CMOS STATIC RAM ISSI
IS61C5128AS 512K x 8 HIGH-SPEED CMOS STATIC RAM ISSI
IS61C64AH 8K x 8 HIGH-SPEED CMOS STATIC RAM Integrated Circuit Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61C25616AL 256K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C25616 256K x 8 High Speed CMOS STATIC RAM
IS61C256 32K x 8 Low Voltage CMOS STATIC RAM
IS61C256AH 32K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C256AL 32K x 8 High Speed CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS61C25616AL IS61C25616AS IS64C25616AL IS64C25616AS 256K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby • TTL compatible interface levels • Single 5V ± 10% power supply • Fully static operation: no clock or refresh required • Available in 44-pin SOJ package and 44-pin TSOP (Type II) • Commercial, Industrial and Automotive tempera- ture ranges available • Lead-free available MARCH 2020 DESCRIPTION The ISSI IS61C25616AL/AS and IS64C25616AL/AS are high-speed, 4,194,304-bit static RAMs organized as 262