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IS61C6416 - 64K x 16 HIGH-SPEED CMOS STATIC RAM

General Description

RAM organized as 65,536 words by 16 bits.

using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 10, 12, 15, and 20 ns.
  • CMOS low power operation.
  • 1650 mW (max) @ -10ns Cycle.
  • 55 µW (max) CMOS Standby.
  • TTL compatible interface levels.
  • Single 5V ± 10% power supply.
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Industrial temperature available.
  • Available in 44-pin SOJ package and 44-pin TSOP (Type II).

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61C6416AL 64K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C64AL 8K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C67 16K x 1 HIGH-SPEED CMOS STATIC RAM
IS61C1024 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS61C6416 64K x 16 HIGH-SPEED CMOS STATIC RAM ISSI® MAY 1999 FEATURES • High-speed access time: 10, 12, 15, and 20 ns • CMOS low power operation — 1650 mW (max) @ -10ns Cycle — 55 µW (max) CMOS Standby • TTL compatible interface levels • Single 5V ± 10% power supply • Fully static operation: no clock or refresh required • Three state outputs • Industrial temperature available • Available in 44-pin SOJ package and 44-pin TSOP (Type II) DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumption.