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IS61C6416

Manufacturer: ISSI (now Infineon)

IS61C6416 datasheet by ISSI (now Infineon).

IS61C6416 datasheet preview

IS61C6416 Datasheet Details

Part number IS61C6416
Datasheet IS61C6416-IntegratedSiliconSolution.pdf
File Size 75.21 KB
Manufacturer ISSI (now Infineon)
Description 64K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C6416 page 2 IS61C6416 page 3

IS61C6416 Overview

The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumption.

IS61C6416 Key Features

  • High-speed access time: 10, 12, 15, and 20 ns
  • CMOS low power operation
  • 1650 mW (max) @ -10ns Cycle
  • 55 µW (max) CMOS Standby
  • TTL patible interface levels
  • Single 5V ± 10% power supply
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Industrial temperature available
  • Available in 44-pin SOJ package and 44-pin TSOP (Type II)
ISSI (now Infineon) logo - Manufacturer

More Datasheets from ISSI (now Infineon)

View all ISSI (now Infineon) datasheets

Part Number Description
IS61C6416AL 64K x 16 HIGH-SPEED CMOS STATIC RAM
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IS61C67 16K x 1 HIGH-SPEED CMOS STATIC RAM
IS61C1024 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C256 32K x 8 Low Voltage CMOS STATIC RAM
IS61C25616 256K x 8 High Speed CMOS STATIC RAM
IS61C25616AL 256K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C25616AS 256K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C256AH 32K x 8 HIGH-SPEED CMOS STATIC RAM

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