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IS61DDB42M36A - 72Mb DDR-II (Burst 4) CIO SYNCHRONOUS SRAM

This page provides the datasheet information for the IS61DDB42M36A, a member of the IS61DDB44M18A 72Mb DDR-II (Burst 4) CIO SYNCHRONOUS SRAM family.

Description

The 72Mb IS61DDB42M36A and IS61DDB44M18A are synchronous, high-performance CMOS static random access memory (SRAM) devices.

These SRAMs have a common I/O bus.

The rising edge of K clock initiates the read/write operation, and all internal operations are self-timed.

Features

  • 2Mx36 and 4Mx18 configuration available.
  • On-chip delay-locked loop (DLL) for wide data valid window.
  • Common I/O read and write ports.
  • Synchronous pipeline read with late write operation.
  • Double Data Rate (DDR) interface for read and write input ports.
  • Fixed 4-bit burst for read and write operations.
  • Clock stop support.
  • Two input clocks (K and K#) for address and control registering at rising edges only.
  • Two input clocks (C and C#) for data ou.

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Datasheet preview – IS61DDB42M36A

Datasheet Details

Part number IS61DDB42M36A
Manufacturer Integrated Silicon Solution
File Size 606.25 KB
Description 72Mb DDR-II (Burst 4) CIO SYNCHRONOUS SRAM
Datasheet download datasheet IS61DDB42M36A Datasheet
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Full PDF Text Transcription

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IS61DDB44M18A IS61DDB42M36A 4Mx18, 2Mx36 72Mb DDR-II (Burst 4) CIO SYNCHRONOUS SRAM JANUARY 2015 FEATURES  2Mx36 and 4Mx18 configuration available.  On-chip delay-locked loop (DLL) for wide data valid window.  Common I/O read and write ports.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface for read and write input ports.  Fixed 4-bit burst for read and write operations.  Clock stop support.  Two input clocks (K and K#) for address and control registering at rising edges only.  Two input clocks (C and C#) for data output control.  Two echo clocks (CQ and CQ#) that are delivered simultaneously with data.  +1.8V core power supply and 1.5V to1.8V VDDQ, used with 0.75V to 0.9V VREF.  HSTL input and output interface.
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