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IS61LV2568L - 256K x 8 HIGH-SPEED CMOS STATIC RAM

General Description

262,144-word by 8-bit CMOS static RAM.

The IS61LV2568L is fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 8, 10 ns Operating Current: 50mA (typ. ) Standby Current: 700µA (typ. ) Multiple center power and ground pins for greater noise immunity Easy memory expansion with CE and OE options CE power-down TTL compatible inputs and outputs Single 3.3V power supply Packages available:.
  • 36-pin 400-mil SOJ.
  • 44-pin TSOP (Type II) Lead-free available ISSI JULY 2005 ®.

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📁 Similar Datasheet

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IS61LV2568 256K x 8 HIGH-SPEED CMOS STATIC RAM ISSI
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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61LV256AL 32K x 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV12816 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816L 128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61LV12816LL 128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61LV12824 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

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IS61LV2568L 256K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • • • • • • • • • High-speed access time: 8, 10 ns Operating Current: 50mA (typ.) Standby Current: 700µA (typ.) Multiple center power and ground pins for greater noise immunity Easy memory expansion with CE and OE options CE power-down TTL compatible inputs and outputs Single 3.3V power supply Packages available: – 36-pin 400-mil SOJ – 44-pin TSOP (Type II) Lead-free available ISSI JULY 2005 ® DESCRIPTION The ISSI IS61LV2568L is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568L is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.