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IS62WV6416ALL - ULTRA LOW POWER CMOS STATIC RAM

General Description

The ISSI IS62WV6416ALL/ IS62WV6416BLL are highspeed, 1M bit static RAMs organized as 64K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation: 30 mW (typical) operating 15 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply 1.7V--2.2V VDD (62WV6416ALL) 2.5V--3.6V VDD (62WV6416BLL).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial temperature available.
  • 2CS Option Available.
  • Lead-fre.

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📁 Similar Datasheet

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS62WV6416BLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV102416ALL 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM
IS62WV102416BLL 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM
IS62WV10248BLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV1288ALL ULTRA LOW POWER CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS62WV6416ALL IS62WV6416BLL 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation: 30 mW (typical) operating 15 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply 1.7V--2.2V VDD (62WV6416ALL) 2.5V--3.6V VDD (62WV6416BLL) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • 2CS Option Available • Lead-free available www.DataSheet4U.com ISSI JUNE 2005 ® DESCRIPTION The ISSI IS62WV6416ALL/ IS62WV6416BLL are highspeed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.