A28F010 Datasheet PDF - Intel Corporation 1024K (128K x 8) CMOS FLASH MEMORY Specs

A28F010 - 1024K (128K x 8) CMOS FLASH MEMORY

Datasheet Summary

Description

Symbol A0 A16 DQ0 DQ7 Type INPUT INPUT OUTPUT Name and Function ADDRESS INPUTS for memory addresses Addresses are internally latched during a write cycle DATA INPUT OUTPUT Inputs data during memory write cycles outputs data during memory read cycles The data pins are active high an

Features

g 10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing ETOX TM III Flash Nonvolatile Memory Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience JEDEC-Standard Pinouts 32-Pin Plastic DIP 32-Lead PLCC (See Packaging Spec Order 231369) Y Y Y Y Y Y Y Y Y Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read write random access nonvolatile memory The 28F010 adds electrical chip-erasure and reprogramming to fa.

Datasheet Details

Part number	A28F010
Manufacturer	Intel Corporation
File Size	300.41 KB
Description	1024K (128K x 8) CMOS FLASH MEMORY
Datasheet	A28F010 Datasheet
Additional preview pages of the A28F010 datasheet.

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Full PDF Text Transcription

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A28F010 1024K (128K x 8) CMOS FLASH MEMORY (Automotive) Y Automotive Temperature Range b 40 C to a 125 C Flash Memory Electrical Chip-Erase 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program 1 000 Erase Program Cycles Minimum over Automotive Temperature Range 12 0V g 5% VPP High-Performance Read 120 ns Maximum Access Time CMOS Low Power Consumption 30 mA Maximum Active Current 300 mA Maximum Standby Current Y Y Integrated Program Erase Stop Timer Command Register Architecture for Microprocessor Microcontroller Compatible Write Interface Noise Immunity Features g 10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing ETOX TM III Flash Nonvolatile Memory Technology EPROM-Compatible Process Base High-Volume Manufacturi

Published: Mar 23, 2005 |