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TE28F128P30 - (TE28FxxxP30) Strata Flash Embedded Memory

This page provides the datasheet information for the TE28F128P30, a member of the TE28F640P30 (TE28FxxxP30) Strata Flash Embedded Memory family.

Datasheet Summary

Description

at any time, without notice.

This document contains information on products in the design phase of development.

The information here is subject to change without notice.

Features

  • High performance.
  • Security.
  • 85/88 ns initial access.
  • One-Time Programmable Registers:.
  • 64 unique factory device identifier bits.
  • 40 MHz with zero wait states, 20 ns clock-to.
  • 64 user-programmable OTP bits data output synchronous-burst read mode.
  • Additional 2048 user-programmable OTP bits.
  • 25 ns asynchronous-page read mode.
  • Selectable OTP Space in Main Array:.
  • 4-, 8-, 16-, and continuous-word burst mode.

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Datasheet preview – TE28F128P30

Datasheet Details

Part number TE28F128P30
Manufacturer Intel Corporation
File Size 1.63 MB
Description (TE28FxxxP30) Strata Flash Embedded Memory
Datasheet download datasheet TE28F128P30 Datasheet
Additional preview pages of the TE28F128P30 datasheet.

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Full PDF Text Transcription

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Intel StrataFlash® Embedded Memory (P30) 1-Gbit P30 Family Datasheet Product Features ■ High performance ■ Security — 85/88 ns initial access — One-Time Programmable Registers: • 64 unique factory device identifier bits — 40 MHz with zero wait states, 20 ns clock-to• 64 user-programmable OTP bits data output synchronous-burst read mode • Additional 2048 user-programmable OTP bits — 25 ns asynchronous-page read mode — Selectable OTP Space in Main Array: — 4-, 8-, 16-, and continuous-word burst mode • 4x32KB parameter blocks + 3x128KB main — Buffered Enhanced Factory Programming blocks (top or bottom configuration) (BEFP) at 5 µs/byte (Typ) — Absolute write protection: VPP = VSS — 1.
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