E28F010
E28F010 is 1024K (128K x 8) CMOS FLASH MEMORY manufactured by Intel.
28F010 1024K (128K X 8) CMOS FLASH MEMORY
8 n Flash Electrical Chip-Erase
1 Second Typical Chip-Erase n Quick-Pulse Programming Algorithm
10 µs Typical Byte-Program 2 Second Chip-Program n 100,000 Erase/Program Cycles n 12.0 V ±5% VPP n High-Performance Read
90 ns Maximum Access Time n CMOS Low Power Consumption
10 m A Typical Active Current 50 µA Typical Standby Current 0 Watts Data Retention Power n Integrated Program/Erase Stop Timer n mand Register Architecture for
Microprocessor/Microcontroller patible Write Interface n Noise Immunity Features
±10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing n ETOX™ Nonvolatile Flash Technology
EPROM-patible Process Base High-Volume Manufacturing
Experience n JEDEC-Standard Pinouts
32-Pin Plastic Dip 32-Lead PLCC 32-Lead TSOP (See Packaging Spec., Order #231369) n Extended Temperature Options
Intel’s 28F010 CMOS flash memory offers the most...
