F28F010 Description
28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Y Quick Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program Y 100 000 Erase Program Cycles Y 12 0V g5% VPP Y High-Performance Read 65.