Datasheet4U Logo Datasheet4U.com

GE28F160B3 - 3 Volt Advanced Boot Block Flash Memory

This page provides the datasheet information for the GE28F160B3, a member of the GE28F008B3 3 Volt Advanced Boot Block Flash Memory family.

Datasheet Summary

Features

  • Flexible SmartVoltage Technology.
  • 2.7 V.
  • 3.6 V read/program/erase.
  • 12 V VPP fast production programming.
  • 1.65 V.
  • .5 V or 2.7 V.
  • 3.6 V I/O option.
  • Reduces overall system power.
  • High Performance.
  • 2.7 V.
  • 3.6 V: 70 ns max access time.
  • Optimized Block Sizes.
  • Eight 8-KB blocks for data, top or bottom locations.
  • Up to 127 x 64-KB blocks for code.
  • Block Locking.

📥 Download Datasheet

Datasheet preview – GE28F160B3

Datasheet Details

Part number GE28F160B3
Manufacturer Intel
File Size 569.89 KB
Description 3 Volt Advanced Boot Block Flash Memory
Datasheet download datasheet GE28F160B3 Datasheet
Additional preview pages of the GE28F160B3 datasheet.

📁 Similar Datasheet

  • GE28F128K18 - Intel StrataFlash Memory (Intel Corporation)
  • GE28F128K3 - Intel StrataFlash Memory (Intel Corporation)
  • GE28F256K18 - Intel StrataFlash Memory (Intel Corporation)
  • GE28F256K3 - Intel StrataFlash Memory (Intel Corporation)
  • GE28F640K18 - Intel StrataFlash Memory (Intel Corporation)
  • GE28F640K3 - Intel StrataFlash Memory (Intel Corporation)
  • GE28F640L18 - Wireless Flash Memory (Intel Corporation)
  • GE28F640L30 - Wireless Memory (Intel Corporation)
  • GE28F640W18 - Wireless Flash Memory (Intel Corporation)
  • GE200NB60S - N-CHANNEL IGBT (ST Microelectronics)
Other Datasheets by Intel

Full PDF Text Transcription

Click to expand full text
Intel® Advanced Boot Block Flash Memory (B3) 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Datasheet Product Features • Flexible SmartVoltage Technology — 2.7 V – 3.6 V read/program/erase — 12 V VPP fast production programming • 1.65 V – .5 V or 2.7 V – 3.6 V I/O option — Reduces overall system power • High Performance — 2.7 V – 3.
Published: |