GE28F640W30
Key Features
- High Performance Read-While-Write/Erase - Burst Frequency at 40 MHz - 70 ns Initial Access Speed - 25 ns Page-Mode Read Speed - 20 ns Burst-Mode Read Speed - Burst and Page Mode in All Blocks and across All Partition Boundaries - Burst Suspend Feature - Enhanced Factory Programming: 3.5 µs per Word Program Time - Programmable WAIT Signal Polarity
- Flash Power - VCC = 1.70 V - 1.90 V - VCCQ = 2.20 V - 3.30 V - Standby Current (0.13 µm) = 8 µA (typ.) - Read Current = 7 mA (4 word burst, typ.)
- Flash Software - 5 µs/9 µs (typ.) Program/Erase Suspend Latency Time - Intel® Flash Data Integrator (FDI) and Common Flash Interface (CFI) Compatible
- Quality and Reliability - Operating Temperature: -40 °C to +85 °C - 100K Minimum Erase Cycles - 0.13 µm ETOX™ VIII Process - 0.18 µm ETOX™ VII Process
- Flash Architecture - Multiple
