GT28F128W18 Datasheet Text
1.8 Volt Intel® Wireless Flash Memory (W18)
28F320W18, 28F640W18, 28F128W18
Preliminary Datasheet
Product Features s Performance
- 70 ns Asynchronous reads for 32 and 64 Mbit, 90 ns for 128 Mbit m- 14 ns Clock to Data Output (tCHQV)
- 20 ns Page Mode Read Speed o- 4-Word, 8-Word, and Continuous-Word Burst Modes
.c- Burst and Page Modes in Parameter and Main Partitions
- Programmable WAIT Configuration
- Enhanced Factory Programming Mode@
U3.50 µs/Word (Typ)
- Glueless 12 V interface for Fast Factory t4Programming @ 8 µs/Word (Typ)
- 1.8 V Low-Power Programming @ 12 µs/Word (Typ) e- Program or Erase during Reads s Architecture e- Multiple 4-Mbit Partitions
- Dual-Operation: Read-While-Write or Read- hWhile-Erase
- Eight, 4-Kword Parameter Code and Data Blocks
S- 32-Kword Main Code and Data Blocks
- Top and Bottom Parameter Configurations tas Power Operation
- 1.7 V to 1.95 V Read and Write Operations
- 1.7 V to 2.24 V VCCQ for I/O Isolation a-...