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JS29F04G08AANB1 - (JS29FxxG08xANB1) SD74 NAND Flash Memory

This page provides the datasheet information for the JS29F04G08AANB1, a member of the JS29F16G08FANB1 (JS29FxxG08xANB1) SD74 NAND Flash Memory family.

Description

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Features

  • Single-level cell (SLC) Technology Organization:.
  • Page size: x8: 2,112 bytes (2,048 + 64 bytes).
  • Block size: 64 pages (128K + 4K bytes).
  • Plane size: 2,048 blocks.
  • Device size: 4Gb: 4,096 blocks; 8Gb: 8,192 blocks; 16Gb: 16,384 blocks Read performance:.
  • Random read: 25µs (MAX).
  • Sequential read: 25ns (MIN) Write performance:.
  • Page program: 220µs (TYP).
  • Block erase: 1.5ms (TYP) Data Retention:.
  • 10 years Endurance:.

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Datasheet Details

Part number JS29F04G08AANB1
Manufacturer Intel
File Size 2.30 MB
Description (JS29FxxG08xANB1) SD74 NAND Flash Memory
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w w w . D a t a S h e e t 4 U . c o m Intel® SD74 NAND Flash Memory Product Features Single-level cell (SLC) Technology Organization: — Page size: x8: 2,112 bytes (2,048 + 64 bytes) — Block size: 64 pages (128K + 4K bytes) — Plane size: 2,048 blocks — Device size: 4Gb: 4,096 blocks; 8Gb: 8,192 blocks; 16Gb: 16,384 blocks Read performance: — Random read: 25µs (MAX) — Sequential read: 25ns (MIN) Write performance: — Page program: 220µs (TYP) — Block erase: 1.5ms (TYP) Data Retention: — 10 years Endurance: — 100,000 PROGRAM/ERASE cycles First block (block address 00h): — Guaranteed to be valid up to 1,000 PROGRAM/ERASE cycles Vcc: — 2.7V – 3.
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