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JS29F08G08CANB2 - SD74 NAND Flash Memory

General Description

at any time, without notice.

Intel Corporation may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the presented subject matter.

Key Features

  • Datasheet.
  • Single-level cell (SLC) Technology.
  • Organization:.
  • Page size: x8: 2,112 bytes (2,048 + 64 bytes).
  • Block size: 64 pages (128K + 4K bytes).
  • Plane size: 2,048 blocks.
  • Device size: 4Gb: 4,096 blocks; 8Gb: 8,192 blocks; 16Gb: 16,384 blocks.
  • Read performance:.
  • Random read: 25µs (MAX).
  • Sequential read: 25ns (MIN).
  • Write performance:.
  • Page program: 220µs (TYP).
  • Block erase: 1.5ms (TYP.

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Datasheet Details

Part number JS29F08G08CANB2
Manufacturer Intel
File Size 1.27 MB
Description SD74 NAND Flash Memory
Datasheet download datasheet JS29F08G08CANB2 Datasheet

Full PDF Text Transcription for JS29F08G08CANB2 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for JS29F08G08CANB2. For precise diagrams, and layout, please refer to the original PDF.

Intel® SD74 NAND Flash Memory JS29F04G08AANB1, JS29F08G08CANB2, JS29F16G08FANB1 Product Features Datasheet „ Single-level cell (SLC) Technology „ Organization: — Page siz...

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asheet „ Single-level cell (SLC) Technology „ Organization: — Page size: x8: 2,112 bytes (2,048 + 64 bytes) — Block size: 64 pages (128K + 4K bytes) — Plane size: 2,048 blocks — Device size: 4Gb: 4,096 blocks; 8Gb: 8,192 blocks; 16Gb: 16,384 blocks „ Read performance: — Random read: 25µs (MAX) — Sequential read: 25ns (MIN) „ Write performance: — Page program: 220µs (TYP) „ Block erase: 1.5ms (TYP) „ Data Retention: — 10 years „ Endurance: — 100,000 PROGRAM/ERASE cycles „ First block (block address 00h): — Guaranteed to be valid up to 1,000 PROGRAM/ERASE cycles „ Vcc: — 2.7V – 3.