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JS29F16B08JAMDB Datasheet PDF

Intel JS29F16B08JAMDB

MD332B NAND Flash Memory

Part No. JS29F16B08JAMDB
Datasheet JS29F16B08JAMDB Download
Manufacturer
Intel
Description MD332B NAND Flash Memory
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JS29F16B08JAMDB datasheet page 1 preview

FEATURES

Preliminary Datasheet „ Open NAND Flash Interface (ONFI) 2.0 „ Core Voltage (VCC): 2.7 V - 3.6 V Compliant „ Multilevel cell (MLC) technology „ First block (block address 00h) guaranteed to be valid when shipped from factory „ Organization: „ Ready/busy# (R/B#) signal provides a — Page size: 4,320 bytes (4,096 + 224 bytes) hardware method of detecting PROGRAM or — Block size: 256 pages (1,024K + 56K bytes) ERASE cycle completion — Plane size: 2,048 blocks „ Read performance — Random read: 50 µs — Sequential read: 20 ns „ Write performance „ WP# signal: Entire device hardware write protect „ Advanced command set: — PAGE CACHE PROGRAM — READ CACHE (RANDOM, SEQUENTIAL, END) — Page program: 900 µs (TYP) — Multi-plane commands — Block erase: 2 ms (TYP) „ Operation status byte provides a software „ Endurance: method of detecting: — 5,000 PROGRAM/ERASE cycles — Operation completion — Data Retention: JEDEC compliant „ Operating Temperature: — Pass/fail condition — Write-protect status...
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