Intel JS29F16B08JAMDB
MD332B NAND Flash Memory
FEATURES
Preliminary Datasheet Open NAND Flash Interface (ONFI) 2.0 Core Voltage (VCC): 2.7 V - 3.6 V Compliant Multilevel cell (MLC) technology First block (block address 00h) guaranteed to be valid when shipped from factory Organization: Ready/busy# (R/B#) signal provides a — Page size: 4,320 bytes (4,096 + 224 bytes) hardware method of detecting PROGRAM or — Block size: 256 pages (1,024K + 56K bytes) ERASE cycle completion — Plane size: 2,048 blocks Read performance — Random read: 50 µs — Sequential read: 20 ns Write performance WP# signal: Entire device hardware write protect Advanced command set: — PAGE CACHE PROGRAM — READ CACHE (RANDOM, SEQUENTIAL, END) — Page program: 900 µs (TYP) — Multi-plane commands — Block erase: 2 ms (TYP) Operation status byte provides a software Endurance: method of detecting: — 5,000 PROGRAM/ERASE cycles — Operation completion — Data Retention: JEDEC compliant Operating Temperature: — Pass/fail condition — Write-protect status...