• Part: JS29F64G08CAMDB
  • Description: MD332B NAND Flash Memory
  • Manufacturer: Intel
  • Size: 1.57 MB
JS29F64G08CAMDB Datasheet (PDF) Download
Intel
JS29F64G08CAMDB

Key Features

  • Open NAND Flash Interface (ONFI) 2.0
  • Core Voltage (VCC): 2.7 V - 3.6 V Compliant
  • Multilevel cell (MLC) technology
  • First block (block address 00h) guaranteed to be valid when shipped from factory
  • Organization:
  • Ready/busy# (R/B#) signal provides a - Page size: 4,320 bytes (4,096 + 224 bytes) hardware method of detecting PROGRAM or - Block size: 256 pages (1,024K + 56K bytes) ERASE cycle completion - Plane size: 2,048 blocks
  • Read performance - Random read: 50 µs - Sequential read: 20 ns
  • Write performance
  • WP# signal: Entire device hardware write protect
  • Advanced command set: - PAGE CACHE PROGRAM - READ CACHE (RANDOM, SEQUENTIAL, END) - Page program: 900 µs (TYP) - Multi-plane commands - Block erase: 2 ms (TYP)