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N28F010 Datasheet 1024k (128k X 8) CMOS Flash Memory

Manufacturer: Intel

Overview: 28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Y Quick Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program Y 100 000 Erase Program Cycles Y.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • g10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing Y ETOXTM Nonvolatile Flash Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience Y JEDEC-Standard Pinouts 32-Pin Plastic Dip 32-Lead PLCC 32-Lead TSOP (See Packaging Spec Order 231369) Y Extended Temperature Options Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read write random access nonvolatile.

More Datasheets from Intel

Part Number Description
N28F001BX 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
N28F020 256K x 8 CMOS FLASH MEMORY
N28F256 256K CMOS Flash Memory
N28F256A 256K CMOS Flash Memory
N28F512 512K (64K x 8) CMOS FLASH MEMORY

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