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N28F010 - 1024K (128K x 8) CMOS FLASH MEMORY

This page provides the datasheet information for the N28F010, a member of the N28F010-120 1024K (128K x 8) CMOS FLASH MEMORY family.

Features

  • g10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing Y ETOXTM Nonvolatile Flash Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience Y JEDEC-Standard Pinouts 32-Pin Plastic Dip 32-Lead PLCC 32-Lead TSOP (See Packaging Spec Order 231369) Y Extended Temperature Options Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read write random access nonvolatile.

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Datasheet Details

Part number N28F010
Manufacturer Intel
File Size 405.78 KB
Description 1024K (128K x 8) CMOS FLASH MEMORY
Datasheet download datasheet N28F010 Datasheet
Additional preview pages of the N28F010 datasheet.

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Full PDF Text Transcription

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28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Y Quick Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program Y 100 000 Erase Program Cycles Y 12 0V g5% VPP Y High-Performance Read 65 ns Maximum Access Time Y CMOS Low Power Consumption 10 mA Typical Active Current 50 mA Typical Standby Current 0 Watts Data Retention Power Y Integrated Program Erase Stop Timer Y Command Register Architecture for Microprocessor Microcontroller Compatible Write Interface Y Noise Immunity Features g10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing Y ETOXTM Nonvolatile Flash Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience Y JEDEC-Standard Pinouts 32-Pin Plastic Dip 32-Lead PLCC 32-Lead TSO
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