g10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing
Y ETOX II Nonvolatile Flash Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience
Y JEDEC-Standard Pinouts 32-Pin Plastic Dip 32-Lead PLCC
(See Packaging Spec Order 231369)
Y Extended Temperature Options
Intel’s 28F512 CMOS flash memory offers the most cost-effective and reliable alternative for read write random access nonvolatile memory The 28F512.
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28F512 512K (64K x 8) CMOS FLASH MEMORY
Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase
Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 1 Second Chip-Program
Y 100 000 Erase Program Cycles
Y 12 0V g5% VPP Y High-Performance Read
120 ns Maximum Access Time
Y CMOS Low Power Consumption 10 mA Typical Active Current 50 mA Typical Standby Current 0W Data Retention Power
Y Integrated Program Erase Stop Timers
Y Command Register Architecture for Microprocessor Microcontroller Compatible Write Interface
Y Noise Immunity Features g10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing
Y ETOX II Nonvolatile Flash Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience
Y JEDEC-Standard Pinouts 32-Pin Plastic Dip 32-Lead PLCC
(See Packaging
P28F512 Datasheet
