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RD38F2020 - (RD38F2xxx) FLASH+PSRAM

This page provides the datasheet information for the RD38F2020, a member of the RD38F2240 (RD38F2xxx) FLASH+PSRAM family.

Datasheet Summary

Description

at any time, without notice.

Intel Corporation may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the presented subject matter.

Features

  • Device Architecture.
  • Flash Density: 32-Mbit, 64-Mbit.
  • Async PSRAM Density: 8-, 16-, 32Mbit; Async SRAM Density: 4-, 8-, 16Mbit.
  • Top, Bottom or Dual flash parameter configuration Device Voltage.
  • Flash VCC = 1.8 V; Flash VCCQ = 1.8 V or 3.0 V.
  • RAM VCC = 3.0 V; RAM VCCQ = 1.8 V or 3.0 V Device Packaging.
  • 88 balls (8 x 10 active ball matrix); Area: 8x10 mm; Height: 1.2 mm to 1.4 mm PSRAM Performance.
  • 70.

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Datasheet preview – RD38F2020

Datasheet Details

Part number RD38F2020
Manufacturer Intel
File Size 742.19 KB
Description (RD38F2xxx) FLASH+PSRAM
Datasheet download datasheet RD38F2020 Datasheet
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Full PDF Text Transcription

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Intel® Wireless Flash Memory (W18/W30 SCSP) 32WQ and 64WQ Family with Asynchronous RAM Datasheet Product Features ■ ■ ■ ■ ■ Device Architecture — Flash Density: 32-Mbit, 64-Mbit — Async PSRAM Density: 8-, 16-, 32Mbit; Async SRAM Density: 4-, 8-, 16Mbit — Top, Bottom or Dual flash parameter configuration Device Voltage — Flash VCC = 1.8 V; Flash VCCQ = 1.8 V or 3.0 V — RAM VCC = 3.0 V; RAM VCCQ = 1.8 V or 3.0 V Device Packaging — 88 balls (8 x 10 active ball matrix); Area: 8x10 mm; Height: 1.2 mm to 1.4 mm PSRAM Performance — 70 ns initial access, 25 ns async page reads at 1.8 V I/O — 70 ns initial access async PSRAM at 1.8V I/O — 88 ns initial access, 30 ns async page reads at 1.8 V I/O — 85 ns initial access, 35 ns async page reads at 3.
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