TE28F010 Description
E 28F010 1024K (128K X 8) CMOS FLASH MEMORY 8 n Flash Electrical Chip-Erase 1 Second Typical Chip-Erase n Quick-Pulse Programming Algorithm 10 µs Typical Byte-Program 2 Second Chip-Program n 100,000 Erase/Program Cycles n 12.0 V ±5% VPP.