Datasheet4U Logo Datasheet4U.com

TE28F400BV - 4-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY

This page provides the datasheet information for the TE28F400BV, a member of the TE28F004BV 4-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY family.

📥 Download Datasheet

Datasheet preview – TE28F400BV

Datasheet Details

Part number TE28F400BV
Manufacturer Intel
File Size 614.26 KB
Description 4-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY
Datasheet download datasheet TE28F400BV Datasheet
Additional preview pages of the TE28F400BV datasheet.

📁 Similar Datasheet

  • TE28F400B3 - (TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory (Intel Corporation)
  • TE28F128J3A - Intel StrataFlash Memory (J3) (Intel Corporation)
  • TE28F128P30 - (TE28FxxxP30) Strata Flash Embedded Memory (Intel Corporation)
  • TE28F160B3 - (TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory (Intel Corporation)
  • TE28F160C3 - (TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory (Intel Corporation)
  • TE28F256J3C - Strata Flash Memory (Intel Corporation)
  • TE28F256J3F105 - 256-Mbit StrataFlash Embedded Memory (Numonyx)
  • TE28F256P30 - (TE28FxxxP30) Strata Flash Embedded Memory (Intel Corporation)
  • TE28F320B3 - (TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory (Intel Corporation)
  • TE28F320C3 - (TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory (Intel Corporation)
Other Datasheets by Intel
  • TE28F400B5 - SMART 5 BOOT BLOCK MEMORY
  • TE28F400BX - 4-MBIT BOOT BLOCK FLASH MEMORY
  • TE28F400CV - 4-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY
  • TE28F001BX - 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
  • TE28F002BV - 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY
  • TE28F002BX - 2-MBIT BOOT BLOCK FLASH MEMORY
  • TE28F004B3 - 3 Volt Advanced Boot Block Flash Memory
  • TE28F004BV - 4-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY

Full PDF Text Transcription

Click to expand full text
E PRELIMINARY 4-MBIT (256K X 16, 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F400CV-T/B, 28F004BV-T/B 28F400CE-T/B, 28F004BE-T/B n Intel SmartVoltage Technology  5V or 12V Program/Erase  2.7V, 3.3V or 5V Read Operation  Increased Programming Throughput at 12V VPP n Very High-Performance Read  5V: 60/80/120 ns Max. Access Time, 30/40 ns Max. Output Enable Time  3V: 110/150/180 ns Max Access 65/90 ns Max. Output Enable Time  2.7V: 120 ns Max Access 65 ns Max. Output Enable Time n Low Power Consumption  Max 60 mA Read Current at 5V  Max 30 mA Read Current at 2.7V–3.
Published: |