The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B
Y High-Integration Blocked Architecture One 8 KB Boot Block w Lock Out Two 4 KB Parameter Blocks One 112 KB Main Block
Y 100 000 Erase Program Cycles Per Block
Y Simplified Program and Erase Automated Algorithms via On-Chip Write State Machine (WSM)
Y SRAM-Compatible Write Interface
Y Deep Power-Down Mode 0 05 mA ICC Typical 0 8 mA IPP Typical
Y 12 0V g5% VPP
Y High-Performance Read 70 75 ns 90 ns 120 ns 150 ns Maximum Access Time 5 0V g10% VCC
Y Hardware Data Protection Feature Erase Write Lockout during Power Transitions
Y Advanced Packaging JEDEC Pinouts 32-Pin PDIP 32-Lead PLCC TSOP
Y ETOXTM II Nonvolatile Flash Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience
Y Extended
TN28F001BX Datasheet
