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B32
IF1331 N-Channel Silicon Junction Field-Effect Transistor
02/2004
• Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25°C
Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range
– 20 V 10 mA 225 mW 1.
IF1331 Datasheet
