InterFET Corporation IFN112
IFN112 is a low noise high gain replacement for the Japanese 2SK112 JFET. The TO-18 package is hermetically sealed and suitable for military applications.| Part No. | IFN112 |
|---|---|
| Datasheet | IFN112 Download |
| Manufacturer |  InterFET Corporation |
| Description | N-Channel JFET |
| Buy | Stock & Price |
FEATURES
● InterFET N0132H Geometry● Low Noise: 1.5 nV/√Hz Typical
● High Gain: 12mS Typical
● RoHS Compliant
● SMT, TH, and Bare Die Package options.
APPLICATIONS
● Low-Noise, High Gain● Replacement for Japanese 2SK112
DESCRIPTION
The -50V InterFET Gate leakages are typically less than 50pA at room temperatures. Gate/Case Drain 2 Source TO-18 Bottom View 3 1 Source 1 Drain 2 SOT23 Top View 3 Gate TO-92 Bottom View Gate 3 Drain 2 Source 1 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance Ordering Information Custom Part and Binning Options Available Part NumberDESCRIPTION
IFN112 Through-Hole PN112 Through-Hole SMP112 Surface Mount 7“ Tape and Reel: Max 3,000 Pieces SMP112TR 13” Tape and Reel: Max 9,000 Pieces IFN112COT Chip Orientated Tray (COT Waffle Pack) IFN112CFT Chip Face-up Tray (CFT Waffle Pack) IFN112 Min Unit -50 V 1.2 mA -0.25 V 7 mS Case TO-18 TO-92...
