IFN112 Datasheet | InterFET Corporation

Inter FET Product Folder Technical Support Order Now IFN112 N-Channel JFET Features - Inter FET N0132H Geometry - Low Noise: 1.5 n V/√Hz Typical - High Gain: 12m S Typical - Ro HS pliant - SMT, TH, and Bare Die Package options. Applications - Low-Noise, High Gain - Replacement for Japanese 2SK112 Description The -50V Inter FET IFN112 is a low noise high gain replacement for the Japanese 2SK112 JFET. Gate leakages are typically less than 50p A at room temperatures. The TO-18 package is hermetically sealed and suitable for military applications. Gate/Case Drain 2 Source TO-18 Bottom View Source 1 Drain 2 SOT23 Top View 3 Gate TO-92 Bottom View Gate 3 Drain 2 Source 1 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff...