IFN112 Description
The -50V InterFET IFN112 is a low noise high gain replacement for the Japanese 2SK112 JFET. Gate leakages are typically less than 50pA at room temperatures. The TO-18 package is hermetically sealed and suitable for military applications.
IFN112 Key Features
- InterFET N0132H Geometry
- Low Noise: 1.5 nV/√Hz Typical
- High Gain: 12mS Typical
- RoHS pliant
- SMT, TH, and Bare Die Package options