IFN6449 - N-Channel JFET

Description

The -300V InterFET IFN6449 and IFN6450 are targeted for high voltage applications.

The TO-39 package is hermetically sealed and suitable for military applications.

Features

InterFET N0042SY Geometry.
High Voltage.
Low Input Capacitance: 3pF Maximum.
RoHS Compliant.
SMT, TH, and Bare Die Package options.

InterFET Corporation

📥 Download Datasheet

Datasheet Details

Part number	IFN6449
Manufacturer	InterFET Corporation
File Size	224.61 KB
Description	N-Channel JFET
Datasheet	IFN6449 Datasheet

📁 Similar Datasheet

IFN105 - N-Channel JFET (InterFET)
IFN113 - N-Channel JFET (InterFET)
IFN152 - N-Channel JFET (InterFET)
IFN17 - N-Channel JFET (InterFET)
IFN201 - N-Channel JFET (InterFET)
IFN201A - N-Channel JFET (InterFET)
IFN202 - N-Channel JFET (InterFET)
IFN363 - N-Channel JFET (InterFET)
IFN3954 - Dual Matched N-Channel JFET (InterFET)
IFN3955 - Dual Matched N-Channel JFET (InterFET)

Other Datasheets by InterFET Corporation

IFN6450 - N-Channel JFET
IFN112 - N-Channel JFET
IFN146 - Dual Matched N-Channel JFET
IFN147 - N-Channel JFET
IFN424 - Dual Matched N-Channel JFET
IFN425 - Dual Matched N-Channel JFET
IFN426 - Dual Matched N-Channel JFET

Full PDF Text Transcription

Click to expand full text

InterFET Product Folder Technical Support Order Now IFN6449-50 IFN6449, IFN6450 N-Channel JFET Features • InterFET N0042SY Geometry • High Voltage • Low Input Capacitance: 3pF Maximum • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • High Voltage Description The -300V InterFET IFN6449 and IFN6450 are targeted for high voltage applications. The TO-39 package is hermetically sealed and suitable for military applications. Gate/Case Drain 2 Source TO-39 Bottom View 3 1 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance IFN6449 Min -100 2 -2 0.

Published: Mar 24, 2009 |