InterFET Corporation IXTH15N70
N-Channel Enhancement Mode
| Part No. | IXTH15N70 |
|---|---|
| Datasheet | IXTH15N70 Download |
| Manufacturer |  InterFET Corporation |
| Description | N-Channel Enhancement Mode |
| Buy | Stock & Price |
MAXIMUM RATINGS
700 700 ±20 ±30 15 60 300 -55 ... +150 150 -55 ... +150 V V V V A A W °C °C °C TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Mounting torque 1.13/10 Nm/lb.in. 6 300 g °CFEATURES
q Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s q q q q International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure High commutating dv/dt rating Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 700 2 4.5 ±100 TJ = 25°C TJ = 125°C 200 1 0.45 V V nA µA mA ΩAPPLICATIONS
q VDSS VGS(th) I GSS IDSS RDS(on) VGS = 0 V, ID = 250 µ A VDS = VGS, ID = 250 µ A VGS = ±20 VDC, VDS = 0 VDS = 0.8● VDSS VGS = 0 V q q q Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages q VGS = 10 V, ID = 0.5
● ID25 Pulse test, t ≤ 300 µ s, duty cycle d ≤ 2 % q q Easy to mount with 1 screw (isolated mounting screw hole) Space savings High power density IXYS reserves the right to change limits, test conditions, and dimensions.
