2N2609 - P-Channel JFET

This page provides the datasheet information for the 2N2609, a member of the 2N2608 P-Channel JFET family.

Datasheet Summary

Description

The 30V InterFET 2N2608 and 2N2609 are targeted for data switches and low-level chopper designs.

Gate leakages are typically less than 1nA at room temperatures.

The TO-18 package is hermetically sealed and suitable for military applications.

Features

InterFET P0032F Geometry.
Typical Noise: 10 nV/√Hz.
Low Ciss: 3.2pF Typical.
RoHS Compliant.
SMT, TH, and Bare Die Package options.

InterFET

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Datasheet Details

Part number	2N2609
Manufacturer	InterFET
File Size	372.26 KB
Description	P-Channel JFET
Datasheet	2N2609 Datasheet
Additional preview pages of the 2N2609 datasheet.

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2N2608 - P-Channel JFET

Full PDF Text Transcription

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InterFET Product Folder Technical Support Order Now 2N2608-9 2N2608, 2N2609 P-Channel JFET Features • InterFET P0032F Geometry • Typical Noise: 10 nV/√Hz • Low Ciss: 3.2pF Typical • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • Choppers • Data Switches • Commutators Description The 30V InterFET 2N2608 and 2N2609 are targeted for data switches and low-level chopper designs. Gate leakages are typically less than 1nA at room temperatures. The TO-18 package is hermetically sealed and suitable for military applications.

Published: May 31, 2017 |