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2N3969 - N-Channel JFET

General Description

The -30V InterFET 2N3969 is targeted for sensitive amplifier stages with gate leakages typically less than 10pA at room temperatures.

The TO-72 package is hermetically sealed and suitable for military applications.

Key Features

  • InterFET N0016H Geometry.
  • Low Noise: 5 nV/√Hz Typical.
  • Low Input Capacitance: 3.5pF Typical.
  • RoHS Compliant.
  • SMT, TH, and Bare Die Package options.

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Datasheet Details

Part number 2N3969
Manufacturer InterFET
File Size 327.82 KB
Description N-Channel JFET
Datasheet download datasheet 2N3969 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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InterFET Product Folder Technical Support Order Now 2N3969 2N3969 N-Channel JFET Features • InterFET N0016H Geometry • Low Noise: 5 nV/√Hz Typical • Low Input Capacitance: 3.5pF Typical • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • Audio Amplifiers • Small Signal Amplifier • High Impedance Pre-Amplifier Description The -30V InterFET 2N3969 is targeted for sensitive amplifier stages with gate leakages typically less than 10pA at room temperatures. The TO-72 package is hermetically sealed and suitable for military applications.