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2N3969 Datasheet PDF

InterFET 2N3969

2N3969 is targeted for sensitive amplifier stages with gate leakages typically less than 10pA at room temperatures. The TO-72 package is hermetically sealed and suitable for military applications.
Part No. 2N3969
Datasheet 2N3969 Download
Manufacturer
InterFET
Description N-Channel JFET
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2N3969 datasheet page 1 preview

FEATURES

● InterFET N0016H Geometry
● Low Noise: 5 nV/√Hz Typical
● Low Input Capacitance: 3.5pF Typical
● RoHS Compliant
● SMT, TH, and Bare Die Package options.

APPLICATIONS

● Audio Amplifiers
● Small Signal Amplifier
● High Impedance Pre-Amplifier

DESCRIPTION

The -30V InterFET Gate Drain 2 Source TO-72 Bottom View 3 4 Case 1 Source 1 Drain 2 SOT23 Top View 3 Gate Product Summary Parameters BVGSS IDSS Gate to Source Breakdown Voltage Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance 2N3969 Min 2N3969A Min Unit -30 -30 V 0.4 0.4 mA -1.7 (Max) -1.7 (Max) V 1.3 1.3 mS Ordering Information Custom Part and Binning Options Available Part Number

DESCRIPTION

2N3969 Through-Hole SMP3969 Surface Mount 7“ Tape and Reel: Max 3,000 Pieces SMP3969TR 13” Tape and Reel: Max 9,000 Pieces 2N3969COT Chip Orientated Tray (COT Waffle Pack) 2N3969CFT Chip Face-up Tray (CFT Waffle Pack) Case TO-72 SOT23 SOT23 COT CFT Packaging Bulk Bulk Minimum 1,000 Pie...
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