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2N4117 - N-Channel JFET

General Description

The -50V InterFET 2N4117/A, 2N4118/A, and 2N4119/A JFET’s are targeted for ultra high input impedance applications.

Gate leakages are typically 120fA at room temperatures.

Proprietary InterFET processes yield exceptionally high radiation tolerance.

Key Features

  • InterFET N0001H Geometry.
  • Low gate leakage: 120fA typical @20V.
  • Low CISS: 1.8pF typical.
  • Typical BVGSS: -60V.
  • High radiation tolerance.
  • RoHS, REACH, CMR compliant.
  • Custom test and binning options available.
  • SMT, TH, and bare die package options.
  • Edge case SPICE modeling: InterFET SPICE TO-72 Bottom View Gate 3 S/D 2 4 Case 1 S/D SOT23 Top View Industry Standard Crosses S/D 1.
  • SST4117, SST4118, SST41.

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Datasheet Details

Part number 2N4117
Manufacturer InterFET
File Size 687.12 KB
Description N-Channel JFET
Datasheet download datasheet 2N4117 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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InterFET Product Folder Technical Support Order Now 2N4117-8-9A 2N4117/A, 2N4118/A, 2N4119/A N-Channel JFET Features • InterFET N0001H Geometry • Low gate leakage: 120fA typical @20V • Low CISS: 1.