IFBF510 Overview
The -20V InterFET IFBF510 and IFBF511 are targeted for low noise amplifier stages as well as mixer and oscillator designs. Gate leakages are typically less than 10pA at room temperatures. The TO-72 package is hermetically sealed and suitable for military applications.
IFBF510 Key Features
- InterFET N0026 Geometry
- Low Noise: 3 nV/√Hz Typical
- Low Ciss: 5.0pF Maximum
- Low Leakage: 10pA Typical
- RoHS pliant
- SMT, TH, and Bare Die Package options