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IFN363 Datasheet PDF

InterFET IFN363

IFN363 is a low noise high gain replacement for the Japanese 2SK363 JFET. The TO-18 package is hermetically sealed and suitable for military applications.
Part No. IFN363
Datasheet IFN363 Download
Manufacturer
InterFET
Description N-Channel JFET
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IFN363 datasheet page 1 preview

FEATURES

● InterFET N0450H Geometry
● Low Noise: 1.1 nV/√Hz Typical
● High Gain: 60mS Typical
● RoHS Compliant
● SMT, TH, and Bare Die Package options.

APPLICATIONS

● Low-Noise Audio Amplifier
● Replacement for Japanese 2SK363

DESCRIPTION

The -40V InterFET Gate leakages are typically less than 50pA at room temperatures. Source Gate/Case 2 Drain Source 1 Drain 2 TO-18 Bottom View 3 1 SOT23 Top View 3 Gate TO-92 Bottom View Source 3 Gate 2 Drain 1 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance Ordering Information Custom Part and Binning Options Available Part Number

DESCRIPTION

IFN363 Through-Hole PN363 Through-Hole SMP363 Surface Mount 7“ Tape and Reel: Max 3,000 Pieces SMP363TR 13” Tape and Reel: Max 9,000 Pieces IFN363COT Chip Orientated Tray (COT Waffle Pack) IFN363CFT Chip Face-up Tray (CFT Waffle Pack) IFN363 Min Unit -40 V 5 mA -0.3 V 60 (typ) mS Case TO-...
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