IFN5197 Description
The -50V InterFET IFN5197, IFN5198, and IFN5199 JFET’s are targeted for low noise differential amplifier designs. Gate leakages are less than 10pA at room temperatures. The TO-71 package is hermetically sealed and suitable for military applications.
IFN5197 Key Features
- InterFET N0016H Geometry
- Low Leakage: 10 pA Typical
- Low Input Capacitance: 3.5 pF Typical
- High Input Impedance
- Replacement for IFN5197,8,9
- RoHS pliant
- SMT, TH, and Bare Die Package options