IFN5566 Overview
The -40V InterFET IFN5564, IFN5565, and IFN5566 JFET’s are targeted for wide bandwith differential amplifiers and mutators. Gate leakages are less than 10pA at room temperatures. The IFN5564 is matched down to 5mV.
IFN5566 Key Features
- InterFET N0072S Geometry
- Low Noise: 2.5 nV/√Hz Typical
- Low Leakage: 10 pA Typical
- Low Input Capacitance: 6.5 pF Typical
- RoHS pliant
- SMT, TH, and Bare Die Package options