IFNU412 Datasheet | InterFET

Features - Inter FET N0016H Geometry - Low Leakage: 10 p A Typical - Low Input Capacitance: 3.5 p F Typical - High Input Impedance - Replacement for U410, U411, U412 - Ro HS pliant - SMT, TH, and Bare Die Package options. Applications - Low Noise Differential Amplifier - Differential Amplifier - Wide-Band Amplifier Description The -40V Inter FET IFNU410, IFNU411, and IFNU412 JFET’s are targeted for low noise differential amplifier designs. Gate leakages are less than 10p A at room temperatures. The TO-71 package is hermetically sealed and suitable for military applications. Custom specifications, matching, and packaging options are available. TO-71 Bottom View Source 6 Drain Gate 3 7 Gate Drain 2 1 Source SOIC8 Top View Gate 1 Drain 2 Source 3 Gate 4 8 Gate 7 Source 6 Drain 5 Gate Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance IFNU410 Min -40 0.5 -0.5 1 0.6 IFNU411 Min -40 0.5 -0.5 1 0.6 Ordering Information Custom Part and Binning Options Available Part Number Description Case IFNU410; IFNU411; IFNU412 Through-Hole TO-71 SMPU410; SMPU411; SMPU412 Surface Mount SOIC8 7“ Tape and Reel: Max 500...