N0001H
Features
- Low Input Capacitance: 2.0p F Typical
- Low Gate Leakage: 0.5p A Typical
- High Breakdown Voltage: -60V Typical
- High Input Impedance
- Small Die: 365um X 365um X 203um
- Bond Pads: 90um X 90um
- Substrate Connected to Gate
- Au Back-Side Finish
Applications
- Small Signal Amplifier
- Ultrahigh Impedance Pre-Amplifier
- Pico-Amp Diodes (PAD)
- High Input Impedance Buffers
- Custom Part Options
Description
The Inter FET N0001H Geometry is targeted high impedance low leakage applications. The low input capacitance makes it ideal for high frequency applications.
Geometry Top View
S-D
S-D
Test Pattern
Standard Parts
- 2N4117/A, 2N4118/A, 2N4119/A
- PAD1, PAD2, PAD5, PAD10
- PAD20, PAD50
- DPAD1, DPAD2, DPAD5, DPAD10
- DPAD20, DPAD50, DPAD100
- IFN421, IFN422, IFN423, IFN424
- IFN425, IFN426, IFN427, IFN428
- VCR7N
Product Summary
Parameters
BVGSS Gate to Source Breakdown Voltage
IDSS Drain to Source Saturation Current
VGS(off) Gate to Source Cutoff...
