N0001H Overview
The InterFET N0001H Geometry is targeted high impedance low leakage applications. The low input capacitance makes it ideal for high frequency applications. It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions.
N0001H Key Features
- Low Input Capacitance: 2.0pF Typical
- Low Gate Leakage: 0.5pA Typical
- High Breakdown Voltage: -60V Typical
- High Input Impedance
- Small Die: 365um X 365um X 203um
- Bond Pads: 90um X 90um
- Substrate Connected to Gate
- Au Back-Side Finish