InterFET N0001H
The InterFET N0001H Geometry is targeted high impedance low leakage applications. The low input capacitance makes it ideal for high frequency applications.| Part No. | N0001H |
|---|---|
| Datasheet | N0001H Download |
| Manufacturer |  InterFET |
| Description | Process Geometry |
| Buy | Stock & Price |
FEATURES
● Low Input Capacitance: 2.0pF Typical● Low Gate Leakage: 0.5pA Typical
● High Breakdown Voltage: -60V Typical
● High Input Impedance
● Small Die: 365um X 365um X 203um
● Bond Pads: 90um X 90um
● Substrate Connected to Gate
● Au Back-Side Finish
APPLICATIONS
● Small Signal Amplifier● Ultrahigh Impedance Pre-Amplifier
● Pico-Amp Diodes (PAD)
● High Input Impedance Buffers
● Custom Part Options
DESCRIPTION
Geometry Top View 01 G S-D S-D G Test Pattern Standard Parts● 2N4117/A, 2N4118/A, 2N4119/A
● PAD1, PAD2, PAD5, PAD10
● PAD20, PAD50
● DPAD1, DPAD2, DPAD5, DPAD10
● DPAD20, DPAD50, DPAD100
● IFN421, IFN422, IFN423, IFN424
● IFN425, IFN426, IFN427, IFN428
● VCR7N Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance Min Typ Max Unit -50 -60 V 0.03 0.6 mA -0.5 -6.0 V 150 μS
MAXIMUM RATINGS
(@ TA = 25°C, Unless otherwise specified) Parameters Min Typ Max Unit...
