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N0001H - Process Geometry

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InterFET

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N0001H Process Geometry by InterFET - Datasheet Preview — Datasheet preview – N0001H

Datasheet Details

Part number	N0001H
Manufacturer	InterFET
File Size	569.49 KB
Description	Process Geometry
Datasheet	N0001H Datasheet
Additional preview pages of the N0001H datasheet.

N0001H Product details

Description

The InterFET N0001H Geometry is targeted high impedance low leakage applications.

The low input capacitance makes it ideal for high frequency applications.

2N4117/A, 2N4118/A, 2N4119/A PAD1, PAD2, PAD5, PAD10

Features

Low Input Capacitance: 2.0pF Typical.
Low Gate Leakage: 0.5pA Typical.
High Breakdown Voltage: -60V Typical.
High Input Impedance.
Small Die: 365um X 365um X 203um.
Bond Pads: 90um X 90um.
Substrate Connected to Gate.
Au Back-Side Finish.

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Published: Jul 29, 2024 |