InterFET N0026S
The InterFET N0026S Geometry is targeted high impedance low leakage applications. The low input capacitance makes it ideal for higher frequency applications.| Part No. | N0026S |
|---|---|
| Datasheet | N0026S Download |
| Manufacturer |  InterFET |
| Description | Process Geometry |
| Buy | Stock & Price |
FEATURES
● Low Input Capacitance: 4.3pF Typical● Low Gate Leakage: 10pA Typical
● High Breakdown Voltage: -45V Typical
● High Input Impedance
● Small Die: 365um X 365um X 203um
● Bond Pads: 90um X 90um
● Substrate Connected to Gate
● Au Back-Side Finish
APPLICATIONS
● Small Signal Amplifier● High Impedance Pre-Amplifier
● Voltage Controlled Resistors
● Custom Part Options
DESCRIPTION
Geometry Top View 26 G S-D S-D G Standard Parts● 2N4416, 2N4416A
● 2N5484, 2N5485
● 2N5486
● J304, J305
● VCR11N Test Pattern Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance Min Typ Max Unit -30 -45 V 2 22 mA -0.5 -10 V 5 mS
MAXIMUM RATINGS
(@ TA = 25°C, Unless otherwise specified) Parameters Min Typ Max Unit VRGS Reverse Gate to Source or Drain Voltage -30 -45 V IFG Continuous Forward Gate Current 10 mA TJ Operating Junction Temperature -55 150 °C TSTG Storage Temperature -65 17...
